Главная / Новости /

Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance

Новости

категории

Рекомендуемые продукты

последние новости

Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance

2019-10-30

The electrical properties of room-temperature bonded wafers made from materials with different lattice constants, such as p-GaAs and n-Si, p-GaAs and n-Si [both with an indium tin oxide (ITO) surface layer], and n-GaN and p-GaAs, were investigated. The bonded p-GaAs//n-Si sample exhibited an electrical interface resistance of 2.8 × 10−1 Ωcenterdotcm2 and showed ohmic-like characteristics. In contrast, the bonded p-GaAs/ITO//ITO/n-Si sample showed Schottky-like characteristics. The bonded n-GaN//p-GaAs wafer sample exhibited ohmic-like characteristics with an interface resistance of 2.7 Ωcenterdotcm2. To our knowledge, this is the first reported instance of a bonded GaN//GaAs wafer with a low electrical resistance.


Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,

send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com


свяжитесь с нами

если вам нужна цитата или дополнительная информация о наших продуктах, пожалуйста, оставьте нам сообщение, ответьте как можно скорее.