PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows: Layer Doping Thickness (um) Remark GaAs undoped ~500 <001> wafer substrate InGaAsN* undoped 0.150 band gap <1 eV Al(0.3)Ga(0.7)As undoped 0.5 GaAs undoped 2 Al(0.3)Ga(0.7)As undoped 0.5 ITEM x/y Doping carrier conc.(cm3) Thickness（um） wave length(um) Lattice mismatch InAs(y)P 0.25 none 5.0*10^16 1.0 - In(x)GaAs 0.63 none 1.0*10^17 3.0 1.9 600<>600 InAs(y)P 0.25 S 1.0*10^18 205.0 - InAs(y)P 0.05->0.25 S 1.0*10^18 4.0 - InP - S 1.0*10^18 0.3 -
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